Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-17T18:51:16.046Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Nickel Silicides on Silicon by Short Duration Incoherent Light Exposure

Published online by Cambridge University Press:  22 February 2011

A. Nylandsted Larsen ,
J. Chevallier  and
G. Sørensen
A. Nylandsted Larsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
J. Chevallier
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
G. Sørensen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
Get access

Abstract

Short duration, incoherent light from a xenon lamp has been used to grow nickel silicides on silicon single crystals from evaporated nickel films. The formation of these silicides was studied by Rutherford Backscattering Spectrometry, channeling, sheet resistivity, and transmission electron microscopy as function of induced temperature (550– 775°C), exposure time (8– 25 sec), and silicon orientation (>111<, >110<, and >100<). Epitaxial NiSi2 films were formed for temperatures above ˜675°C whereas polycrystalline NiSi films were formed below this temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 727
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Correra, L. and Pedulli, L., Radiat.Effects 63, 187 (1982)Google Scholar
2.Baumgart, H., Celler, G.K., Lischner, D.J., Robinson, McD., and Sheng, T.T., Mat. Res.Soc.Symp.Proc. 13, 349–354 (1983)Google Scholar
3.Nylandsted Larsen, A. and Borisenko, V.E., Appl.Phys., in press Google Scholar
4.Sinha, A.K., Thin Solid Films 90, 271 (1982)Google Scholar
5.d'Heurle, F.M., VLSI Science and Technology, Dell'Oca, C. and Bullis, W.M., eds. (The Electrochemical Society, Pennington, 1982) p.194Google Scholar
6.Tung, R.T., Poate, J.M., Bean, J.C., Gibson, J.M., and Jacobsen, D.C., This Solid Films 93, 77 (1982)Google Scholar
7.Mohammadi, F., Sol.Stat.Tech.Jan. 1981, p.65Google Scholar
8.Harper, R.E., Maydell-Ondrusz, E.A., Wilson, I.H., and Stephens, K.G., MRS Annual Meeting Nov.14–17, 1983, Symposium C: Thin Films and InterfacesGoogle Scholar
9.Nylandsted Larsen, A., to be publishedGoogle Scholar