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Growth of Monocrystalline Cosi2 on Cosi2 Seeds in (100)Si

Published online by Cambridge University Press:  25 February 2011

Karen Maex
Karen Maex*
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.) Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

Growth of monocrystalline CoSi2 on top of (100) Si has been obtained by silicidation of deposited Co films on Si/CoSi2/Si heterostructures formed by ion implantation. The layers are of excellent crystalline quality and the CoSi2/Si interface is atomically flat. The required implanted dose can be reduced, since epitaxial silicidation is possible starting from aligned CoSi2 precipitates in the Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 111
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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