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Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

  • M. Yoganathan (a1), A. Gupta (a1), E. Semenas (a1), E. Emorhokpor (a1), C. Martin (a1), T. Kerr (a1), I Zwieback (a1), A. E. Souzis (a1), T.A. Anderson (a1), C.D. Tanner (a2), J. Chen (a2), D.L. Barrett (a1) (a2), R.H. Hopkins (a2), C.J. Johnson (a2), Fei Yan (a3), W.J. Choyke (a3) and R.P. Devaty (a3)...

Abstract

Semi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

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1. Tairov, Yu. M. and Tsvetkov, V. F., J. Crystal Growth 43, 208 (1978).
2. Barrett, Donovan L., Hobgood, Hudson M., McHugh, James P., and Hopkins, Richard H., U.S. Patent No. 5,611,955 (18 March 1997).
3. Hobgood, H. M., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchell, W. C. and Roth, M., Appl. Phys. Lett. 66, 1364 (1995).
4. Sanchez, Edward K., Kuhr, Thomas, Heydemann, Volker D., Snyder, David W., Rohrer, Gregory S., and Skowronski, Marek, J. Electron. Mater. 29(3), 347 (2000).
5. Faust, J. W. Jr., in Silicon Carbide (Pergamon, New York, 1960) p. 403.
6. Bickermann, M., Weingärtner, R., and Winnacker, A., Journal of Crystal Growth 254, 390 (2003).
7. Evwaraye, A. O., Smith, S. R. and Mitchel, W. C., J. Appl. Phys. 79 (1), 253 (1996).
8. Choyke, W. J., in The Physics and Chemistry of Carbides, Nitrides, and Borides-NATO ASI Series E: Applied Sciences 185, edited by Freer, R. (Kluwer, Dordrecht, 1990) p. 863.
9. Devaty, R. P. and Choyke, W. J., Phys. Stat. Sol. A, 162 (1997) p.5.
10. Schneider, J., Müller, H. D., Maier, K., Wilkening, W., and Fuchs, F., Dörnen, A., Leibenzeder, S. and Stein, R., Appl. Phys. Lett. 56 (12), 11841186 (1990).
11. Janzén, E., Henry, A., Bergman, J.P., Ellison, A. and Magnusson, B., Mater. Sci. Semicond. Proc. 4, 181 (2001).
12. Clemen, L. L., Yoganathan, M., Choyke, W. J., Devaty, R. P., Kong, H. S., Edmond, J. A., Larkin, D. J., Powell, J. A. and Burk, A. A. Jr., (Inst. Phys. Conf. Series 137, 5th SiC and Related Materials Conference, Washington D.C. (1993)) p.251.

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Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

  • M. Yoganathan (a1), A. Gupta (a1), E. Semenas (a1), E. Emorhokpor (a1), C. Martin (a1), T. Kerr (a1), I Zwieback (a1), A. E. Souzis (a1), T.A. Anderson (a1), C.D. Tanner (a2), J. Chen (a2), D.L. Barrett (a1) (a2), R.H. Hopkins (a2), C.J. Johnson (a2), Fei Yan (a3), W.J. Choyke (a3) and R.P. Devaty (a3)...

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