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Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd

Published online by Cambridge University Press:  28 February 2011

Paul Reinert ,
Mark Mckee ,
Peter E. Norris  and
Richard A. Stall
Paul Reinert
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873
Mark Mckee
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873
Peter E. Norris
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873
Richard A. Stall
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, New Jersey 08873
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Abstract

As the demands for InP epitaxial materials grow, the need for larger throughput growth techniques becomes important. However, uniformity of thickness and particularly composition of InGaAs and InGaAsP films has proved troublesome. This has limited much of the InGaAsP growth work to single wafer machines. The purpose of this work is to demonstrate good film properties and uniformity on a multi-wafer machine that holds three, two-inch diameter wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 151
Copyright
Copyright © Materials Research Society 1989

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