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Growth of Improved GaAs/Si: Suppression of Volmer-Weber Nucleation for Reduced Threading Dislocation Density

  • P. J. Taylor (a1) (a2), W.A. Jesser (a1), G. Simonis (a3), W. Chang (a3), M. Lara-Taysing (a3), J. Bradshaw (a3), W. Clark (a3), M. Martinka (a4), J.D. Benson (a4) and J.H. Dinàn (a4)...

Abstract

The growth of reduced dislocation density GaAs/Si is performed by a novel two-step technique where the first epitaxy step takes place at 75° C and the second is performed at 580° C. The initial deposition is single crystal, continuous, and planar such that there is no contribution to the dislocation density from Volmer-Weber island coalescence and no trapping of dislocations in pinholes. Using this new growth technique, a reduced dislocation density the order of 106/cm2 was obtained. The improved crystallinity is indicated by the more narrow x-ray full-width-at-half-maximum (FWHM) value of 110 arcseconds. GaAs p-i-n diodes were grown on the reduced dislocation density GaAs/Si and it was found that the resistivity of the intrinsic region for the heteroepitaxial diodes was similar to homoepitaxial ones for small mesa sizes.

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Growth of Improved GaAs/Si: Suppression of Volmer-Weber Nucleation for Reduced Threading Dislocation Density

  • P. J. Taylor (a1) (a2), W.A. Jesser (a1), G. Simonis (a3), W. Chang (a3), M. Lara-Taysing (a3), J. Bradshaw (a3), W. Clark (a3), M. Martinka (a4), J.D. Benson (a4) and J.H. Dinàn (a4)...

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