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Growth of Group IV-IV Heterostructures: Initial Stages of Interface Formation

Published online by Cambridge University Press:  25 February 2011

H.-J. Gossmann  and
L. C. Feldman
H.-J. Gossmann
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
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Abstract

The two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface. The initial stages of interface formation play a crucial role in this respect. Relevant questions are addressed under atomically clean conditions in the Si/Ge Si/Si and Ge/Sn systems, using ion scattering surface analysis, low energy electron diffraction and Auger electron spectroscopy. Of particular interest with respect to (1) is the general role of reconstruction in epitaxial growth: A necessary condition for perfect growth is the reordering of the substrate surface reconstruction. We show that the deposition temperature necessary to achieve this reordering depends strongly on the topography of the substrate reconstruction. For example, Ge deposition at room-temperature reorders the Si(100)2×1 reconstruction but not the Si(111)7×7, implying different epitaxial temperatures for these two substrates. To illustrate (2) we discuss the complex growth and anomalous diffusion found in the Ge/Sn system. Below a certain critical coverage Θc (1.15·1015 cm−2) no indiffusion of the Sn overlayer takes place, even at 700 K, although above Θc severe indiffusion does occur at this temperature. This result is discussed in terms of theories of surface segregation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 251
Copyright
Copyright © Materials Research Society 1986

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