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Growth of GaAs on Si(100) Substrate by Ionized Cluster Beam Method

  • M. Shinohara (a1), F. Ohtani (a1), O. Ishiyama (a1) and M. Asari (a1)

Abstract

GaAs epilayers on (100)Si substrates have been grown by ionized cluster beam(ICB) method under conventional high vacuum conditions. The developed deposition method has two characteristics: first is cleaning the Si surface by accelerated As clusters and second is adopting double layer structure in order to confine dislocations within a primary layer. As a result of these features, the etch pit density came to be 2×1O6cm−2 and the crystal quality was comparable to that of molecular beam epitaxy(MBE) or metal organic chemical vapor deposition(MOCVD) method. In the present paper, we discuss those characteristic phenomena of ICB method and demonstrate MESFET's fabricated on our GaAs grown on Si substrates.

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Growth of GaAs on Si(100) Substrate by Ionized Cluster Beam Method

  • M. Shinohara (a1), F. Ohtani (a1), O. Ishiyama (a1) and M. Asari (a1)

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