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Growth of GaAs on Si(100) Substrate by Ionized Cluster Beam Method

Published online by Cambridge University Press:  25 February 2011

M. Shinohara ,
F. Ohtani ,
O. Ishiyama  and
M. Asari
M. Shinohara
Affiliation:
Central Research Laboratory, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604, Japan
F. Ohtani
Affiliation:
Central Research Laboratory, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604, Japan
O. Ishiyama
Affiliation:
Central Research Laboratory, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604, Japan
M. Asari
Affiliation:
Central Research Laboratory, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604, Japan
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Abstract

GaAs epilayers on (100)Si substrates have been grown by ionized cluster beam(ICB) method under conventional high vacuum conditions. The developed deposition method has two characteristics: first is cleaning the Si surface by accelerated As clusters and second is adopting double layer structure in order to confine dislocations within a primary layer. As a result of these features, the etch pit density came to be 2×1O6cm−2 and the crystal quality was comparable to that of molecular beam epitaxy(MBE) or metal organic chemical vapor deposition(MOCVD) method. In the present paper, we discuss those characteristic phenomena of ICB method and demonstrate MESFET's fabricated on our GaAs grown on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 423
Copyright
Copyright © Materials Research Society 1991

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References

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