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Growth of Erbium Doped PbF2 - SrF2 Epitaxial Layers on GaAs(111)B for Upconversion Waveguide Laser Applications

Published online by Cambridge University Press:  15 February 2011

M. Lui ,
R. A. McFarlane  and
D. Yap
M. Lui
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Roads, Malibu, CA 90265
R. A. McFarlane
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Roads, Malibu, CA 90265
D. Yap
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Roads, Malibu, CA 90265
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Abstract

Waveguide structures offer the possibility of making an upconversion laser operating at room temperature. By reducing the optical mode cross section can lead to a very high pump power density which allows modest pumping powers to overcome non-radiative decay processes. We have reported earlier on the observation of upconversion luminescence from both planar and channel waveguides of Erbium doped ZnF2 on MgF2(001) and Erbium doped PbF2 on GaAs(100). The epitaxial fluoride layers were all grown by Molecular Beam Epitaxy. Fluoride films preferentially grow on the (111) GaAs surface. In order to exploit this fact, we have grown Erbium doped PbF2 on GaAs(111)B with an intervening SrF2 cladding layer. The SrF2 and PbF2 growth conditions have been optimized on GaAs(111)B using X-ray rocking curve analysis. The crystalline quality of the films grown on GaAs(111)B are far superior to those grown on GaAs(100). Upconversion luminescence has been observed in the PbF2: Er/SrF2/GaAs(111)B planar waveguide structures. The guide ends were formed by cleaving the semiconductor wafer and the 800nm and 980nm pump light was introduced from a Ti-Sapphire laser by end pumping using a microscope objective.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 329: Symposium R – New Materials for Advanced Solid State Lasers , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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