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Growth of cubic GaN on Si (100) Substrates

  • Suzuka Nishimura (a1), Shigeya Naritsuka (a2) and Kazutaka Terashima (a3)

Abstract

We have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide(BP) buffer crystals. We have successfully grown BP crystals by MOVPE technique with electrically n-type and thickness deviation is within several % along 2inch wafer under undoped conditions. The electrical conductivity is less than 0.5mohm∙cm. We have preliminary grown GaN by RF-MBE technique, before we carry out mass-producing MOVPE on larger diameter Si substrates. It has been found the cubic type GaN has been successfully grown on the substrates by measuring X-ray diffraction. The crystal quality and defect generation were observed by TEM. It has been found that there are much more dislocations than 109cm-2 generated at GaN/BP interface.

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References

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1 Sung, Li-Wei et al, Journal of Crystal Growth 241 (2002) 320324.
2 Liu, H.F. et al, Journal of Crystal Growth 227–228 (2001) 390394.
3 Nishimura, S. et al, Materials Science and Engineering B93 (2002) 135138.
4 Nishimura, S. et al, Physica Status Solidi (c) 1, No.2 (2004) 238241.

Keywords

Growth of cubic GaN on Si (100) Substrates

  • Suzuka Nishimura (a1), Shigeya Naritsuka (a2) and Kazutaka Terashima (a3)

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