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Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD

Published online by Cambridge University Press:  01 February 2011

W. H. Sun ,
J. L. Chen ,
L. S. Wang  and
S. J. Chua
W. H. Sun
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
J. L. Chen
Affiliation:
Department of Materials Science, National University of Singapore
L. S. Wang
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
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Abstract

AlN self-assembled quantum dots (QDs) with high density of ∼ 4.4 × 1010/cm2 on Si(111) substrates have been grown by low-pressure chemical vapor deposition under a very low V/III ratio of 350. We found that using AlN-QD/AlN buffer two-inch GaN epilayers without cracks were grown, indicating the underlying quantum dots play a crucial role in relaxing the stain of GaN epilayer. The quality and morphology were investigated by atom force microscopy, transmission electron microscopy, X-ray diffraction and optical microscope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.36
Copyright
Copyright © Materials Research Society 2004

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References

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