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Growth Mode and Defects in Aluminum Nitride Sublimated on (0001) 6H-SiC Substrates

Published online by Cambridge University Press:  17 March 2011

Lianghong Liu ,
Bei Liu ,
Ying Shi  and
J. H. Edgar
Lianghong Liu
Affiliation:
Dept. of Chemical Engineering, Kansas State University, Manhattan, KS 66506
Bei Liu
Affiliation:
Dept. of Chemical Engineering, Kansas State University, Manhattan, KS 66506
Ying Shi
Affiliation:
Dept. of Chemical Engineering, Kansas State University, Manhattan, KS 66506
J. H. Edgar
Affiliation:
Dept. of Chemical Engineering, Kansas State University, Manhattan, KS 66506
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Abstract

The effect of substrate preparation on the sublimation growth of AlN on 6H-SiC was investigated at about 1800°C and 400 torr. Short and long-time sublimation growths of AlN indicated that the nucleation, growth mode, and defects formed depended on the substrate surface preparation. Growth on an off-axis 6H-SiC substrate with 6H-SiC epilayer was in the step flow growth mode in contrast to the island growth mode on as-received substrates, while the 2-D growth was achieved on substrates first coated with an AlN epitaxial layer. Cracks due to the lattice and mainly large thermal expansion coefficient mismatch were always observed in the deposited AlN crystal, as characterized by SEM and optical microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.40
Copyright
Copyright © Materials Research Society 2001

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References

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