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Growth Mechanisms of Electrodeposited CuInSe2 and Cu(In,Ga)Se2 Determined by Cyclic Voltammetry

Published online by Cambridge University Press:  01 February 2011

M. Estela Calixto ,
Kevin D. Dobson ,
Brian E. McCandless  and
Robert W. Birkmire
M. Estela Calixto
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A
Kevin D. Dobson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A
Brian E. McCandless
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A
Robert W. Birkmire
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A
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Abstract

Electrodeposition (ED) of CuInSe2-based thin films from a buffered single-bath on dcsputtered Mo layers has been investigated. In order to understand the film growth, cyclic voltammetry (CV) was used to identify mechanisms leading to the formation of CuInSe2 and Cu(In,Ga)Se2. Similar CV data were observed for deposition from Cu-Se, Cu-In-Se, Cu-Ga-Se, and Cu-In-Ga-Se baths. A preliminary mechanism for CuInSe2 and Cu(In,Ga)Se2 film growth has been proposed from CV, composition and glancing incidence x-ray diffraction (GIXRD) data. Incorporation of In into the growing films occurs via reaction with H2Se, formed by reduction of the initially deposited Cu3Se2, to form In2Se3, which is in turn rapidly assimilated into the film by reaction with copper selenides to form CuInSe2. The incorporation of Ga may occur via a similar mechanism, however, the precipitation of Ga(OH)3 can not be ruled out as a possible route for Ga uptake. All as-deposited ED CuInSe2–based films have poor crystallinity and require annealing in H2Se prior to device processing. Preliminary device results are presented, reporting a conversion efficiency of 6.5% and 6.2% for electrodeposited CuInSe2 and Cu(In,Ga)Se2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.17
Copyright
Copyright © Materials Research Society 2005

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References

1 Calixto, M. E., Dobson, K. D., McCandless, B. E. and Birkmire, R. W., 31st IEEE Photovoltaic Specialists Conference, Jan 2-7, 2005 Orlando Fl. Google Scholar
2 Mishra, K. K. and Rajeshwar, K., J. Electroanal. Chem., 271, 279 (1989).Google Scholar
3 Thouin, L., Massaccesi, S., Sanchez, S. and Vedel, J., J. Electroanal. Chem., 374, 81 (1994).Google Scholar
4 Menezes, S., Mat. Res. Soc. Symp., 426, 189 (1996).Google Scholar
5 Calixto, M. E., Dobson, K. D., McCandless, B. E. and Birkmire, R. W., submitted to J. Electrochem. Soc. Google Scholar
6 Bard, A. J. and Faulkner, L.R., Electrochemical methods-fundamentals and applications, Wiley, New York, 1980.Google Scholar
7 Oliveira, M. C. F., Azevedo, M. and Cunha, A., Thin Solid Films, 405, 129 (2002).Google Scholar