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Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

  • Yun-Xin Li (a1), L. Salamanca-Riba (a1), K. Wongchotigul (a2), P. Zhou (a2), M. G. Spencer (a2) and V. K. Jones (a3)...

Abstract

AIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.

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Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

  • Yun-Xin Li (a1), L. Salamanca-Riba (a1), K. Wongchotigul (a2), P. Zhou (a2), M. G. Spencer (a2) and V. K. Jones (a3)...

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