Skip to main content Accessibility help
×
Home

Growth Dependence of Thickness, Morphology and Electrical Transport of InN Over Layers on Ain-Nucleated (00.1) Sapphire

  • T. J. Kistenmacher (a1), S. A. Ecelberger (a1) and W. A. Bryden (a1)

Abstract

The seeded-heteroepitaxial growth, morphology and electrical transport properties of InN overlayers deposited by reactive magnetron sputtering on AIN-nucleated (00.1) sapphire have been investigated. For comparison, InN films were grown directly onto (00.1) sapphire under identical experimental conditions. These unseeded films showed a unimodal growth and were a mixture of textured and broadly heteroepitaxial grains. Low Hall mobility and carrier concentration and high resistivity were typical. In contrast, the AIN-nucleated InN overlayers exhibited a bimodal growth, strongly heteroepitaxial grains, and high Hall mobility. A particularly interesting aspect of the films grown on seeded (00.1) sapphire is the preservation of electrical continuity and high Hall mobility even in the limit of InN overlayers with thicknesses only on the order of 20–40Å.

Copyright

References

Hide All
1. Bauer, E. G., et al., J. Mater. Res. 5, 852 (1990).
2. See, for example, Kern, R., Le Lay, G., and Metois, J. J., in Current Topics in Materials Science, Kaldis, E., ed., (North Holland, Amsterdam, 1979), pg. 130.
3. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 415 (1988);
Amano, H., Akasaki, I., Hiramatsu, K., Koide, N., and Sawaki, N., Thin Solid Films 163, 415 (1988);
Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).
4. Wickenden, D. K., Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., and Wickenden, A. E., Proc. Mater. Res. Soc, 221, 167 (1991).
5. Choi, C. -H., Hultman, L, Choi, W. -A., and Barnett, S. A., J. Vac. Sci. Technol. B 9, 221 (1991).
6. Engel, B. N., England, C. D., Van Leeuwen, R. A., Wiedmann, M. H., and Falco, C. M., Phys. Rev. Lett. 67, 1910 (1991).
7. Lee, C. H., He, H., Lamelas, F., Vavra, W., Uher, C., and Clarke, R., Phys. Rev. Lett. 62, 653 (1989).
8. Lee, C. H., Farrow, R. F. C., Lin, C. J., Marinerom, E. E. and Chien, C. J., Phys. Rev. B 42, 11384 (1990).
9. Miller, K. T. and Lange, F. F., J. Mater. Res. 6, 2387 (1991).
10. Kistenmacher, T. J. and Bryden, W. A., Appl. Phys. Lett. 59, 1844 (1991);
Bryden, W. A., Morgan, J. S., Fainchtein, R., and Kistenmacher, T. J., Thin Solid Films, in press.

Growth Dependence of Thickness, Morphology and Electrical Transport of InN Over Layers on Ain-Nucleated (00.1) Sapphire

  • T. J. Kistenmacher (a1), S. A. Ecelberger (a1) and W. A. Bryden (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed