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Growth Characteristics of Au/SiO2 Nanocomposites

Published online by Cambridge University Press:  15 February 2011

M. D. Jaeger
Affiliation:
Visiting Scientist, Michigan State University Center for Sensor Materials, East Lansing, Michigan
R. E. Soltis
Affiliation:
Physics Department, Ford Research Laboratory, 20,000 Rotunda, Dearborn, Michigan
J. A. Thomas
Affiliation:
Physics Department, Ford Research Laboratory, 20,000 Rotunda, Dearborn, Michigan
J. Hangas
Affiliation:
Physics Department, Ford Research Laboratory, 20,000 Rotunda, Dearborn, Michigan
A. E. Chen
Affiliation:
Physics Department, Ford Research Laboratory, 20,000 Rotunda, Dearborn, Michigan
E. M. Logothetis
Affiliation:
Physics Department, Ford Research Laboratory, 20,000 Rotunda, Dearborn, Michigan
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Abstract

This paper describes experimental studies of the growth morphology of Au/SiO2 nanocomposites consisting of nanometer-sized metal particles imbedded in a metal oxide, formed by the sequential deposition of metal and metal-oxide layers by RF sputtering. The materials work is aimed at the development of novel resistive-type exhaust gas constituent sensors. Using digitized images from a transmission electron microscope and an automated particle counting routine, we have measured the particle size distributions for films with varying layer thicknesses and deposition conditions. We find strong dependence of the particle size and overall composite structure on the Au and SiO2 layer thicknesses, in agreement with previous work.[1] We also identified four microstructure classes which can occur.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Logothetis, E. M., Kaiser, W. J., Plummer, H. K., and Shinozaki, S. S., J. Appl. Phys. 60, 2548 (1986).Google Scholar
2. Mizsei, J., Sensors and Actuators B 15–16, 328 (1993).Google Scholar
3. He, L. and Shi, Z. Q., Solid-State Electronics 39, 1811 (1996);Google Scholar
Kaiser, W.J., Logothetis, E.M., and Wenger, L.E., J. Phys. C 18, L837 (1985).Google Scholar
4. Scherzer, C. J., Appl. Phys. 20, 20 (1949);Google Scholar
Thomas, Gareth, and Goringe, Michael J., Transmission Electron Microscopy of Materials (John Wiley & Sons, Inc., New York, 1979), p. 319.Google Scholar
5. Knights, J. C., J. Non-Crystalline Solids 35, 159 (1980).Google Scholar
6. Mallik, R. R., Kulnis, W. J. Jr., and Butler, T. Jr., J. Appl. Phys. 70, 1 (1991).Google Scholar
7. Venables, J. A., Spiller, G. D. T., and Hanbucken, M., Rep. Prog. Phys. 47, 399459 (1984).Google Scholar