Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-14T15:40:41.378Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

J. G. Fleming ,
E. Roherty-Osmun  and
J. S. Custer
J. G. Fleming
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
E. Roherty-Osmun
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
J. S. Custer
Affiliation:
Sandia National Laboratories, Org. 1323, MS 1085, P.O. Box 5800, Albuquerque NM 87185.
Get access

Abstract

We have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 μΩ-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 389
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Reid, J. S., Kolawa, E., Garland, C. M., Nicolet, M.-A., Cardone, F., Gupta, D., and Ruiz, R. P., J. Appl. Phys. 79, 1109 (1996).Google Scholar
2. Reid, J. S., Liu, R. Y., Smith, P. M., Ruiz, R. P., and Nicolet, M.-A., Thin Solid Films 262, 218 (1995).Google Scholar
3. Fleming, J. G., Roherty-Osmun, E., Custer, J., Smith, Paul Martin, Reid, J. S. and Nicolet, M.-A., Procedings of the Advanced Metalization and Interconnect Systems for ULSI Applications conference, 1995, MRS, in press.Google Scholar
4. Marcus, S. D., and Foster, R. F., Thin Solid Films 236, 330, (1993).Google Scholar
5. Nakajima, T., Watanabe, K., and Watanabe, N., J. Electrochem. Soc. 134, 3175, (1987).Google Scholar
6. Lee, C. W., Kim, Y. T., and Min, S.-K., Appl. Phys. Lett. 62, 3312, (1993).Google Scholar
7. Chiu, H.-T., and Chuang, S.-H., J. Mater. Res. 8, p 1353 (1993).Google Scholar
8. Tsai, M. H., Sun, S. C., Chiu, H. T., and Chuang, S. H., Appl. Phys. Lett. 68, 1412 (1996).Google Scholar
9. Kattelus, H. P., Kolawa, E., Affolter, K., and Nicolet, M-A., J. Vac. Sci. Technol. 3, 2246 (1985).Google Scholar