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Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Published online by Cambridge University Press:  15 February 2011

Hung-Min Lin ,
Jian Yang ,
Yong-Lin Chen ,
Yau-Chung Liu ,
Kai-Min Yin ,
Ji-Jung Kai ,
Fu-Rong Chen ,
Li-Chyong Chen ,
Yang-Fang Chen  and
Chia-Chun Chen
Hung-Min Lin
Affiliation:
Department of Chemistry, National Taiwan Normal University.
Jian Yang
Affiliation:
Department of Chemistry, National Taiwan Normal University.
Yong-Lin Chen
Affiliation:
Institute of Condensed Matter, National Taiwan University.
Yau-Chung Liu
Affiliation:
Department of Chemistry, National Taiwan Normal University.
Kai-Min Yin
Affiliation:
Department of Engineering and System Science, National Tsinghua University
Ji-Jung Kai
Affiliation:
Department of Engineering and System Science, National Tsinghua University
Fu-Rong Chen
Affiliation:
Department of Engineering and System Science, National Tsinghua University
Li-Chyong Chen
Affiliation:
Institute of Condensed Matter, National Taiwan University.
Yang-Fang Chen
Affiliation:
Institute of Condensed Matter, National Taiwan University.
Chia-Chun Chen*
Affiliation:
Department of Chemistry, National Taiwan Normal University. Institute of Atomic and Molecular Sciences, Academia Sinica.
*
*To whom the correspondence should be addressed. E-mail: t42005@cc.ntnu.edu.tw
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Abstract

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q2.6
Copyright
Copyright © Materials Research Society 2003

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