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Growth and Metrology of Silicon Oxides on Silicon Carbide

Published online by Cambridge University Press:  15 March 2011

Andrew M. Hoff
Andrew M. Hoff*
Affiliation:
Nanomaterials and Nanomanufacturing Research Center University of South Florida Tampa, FL 33620, U.S.A
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Abstract

Thermal oxidation of SiC by the afterglow method has opened new pathways of opportunity to address both thin film growth and defects that hinder electronic device development with this important semiconductor material. Oxide growth, with rates up to 700Å per hour, on SiC has been demonstrated using this technique over a temperature range from 400°C to 1100°C at 1 Torr total pressure. Electrical and physical properties of oxide films grown by conventional means or by the afterglow method were obtained with a novel, non-contact charge-voltage (Q-V) metrology approach. This instrument employs a combination of incremental contact potential difference values obtained in response to applied corona charge generated from air. The slope of the Q-V characteristic within a bias range corresponding to accumulation of the semiconductor provides an effective dielectric permittivity value for the grown film. Effective permittivity values for afterglow oxides grown on SiC approach that of SiO2 grown on silicon substrates whereas the values for oxides grown on SiC in an atmospheric steam oxidation process are always depressed relative to SiO2 on silicon, indicating that the latter process always produces low-k oxides. A mechanistic discussion regarding these observed differences between the two oxidation methods is presented along with suggestions for an integrated process and metrology approach to reduce defects in oxide films on SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J9.4
Copyright
Copyright © Materials Research Society 2004

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References

1. Savtchouk, A., Oborina, E., Hoff, A.M., and Lagowski, J., ICSCRM 03 Proceedings, in press.Google Scholar
2. Hoff, A.M., Oborina, E., Saddow, S.E., and Savtchouk, A., ICSCRM 03 Proceedings, in press.Google Scholar
3. Tobin, P.J., Okada, Y., Ajuria, S.A., Lakhotia, V., Feil, W.A., and Hedge, R.I., J. Appl. Phys., 75, 1811–1817 (1994).Google Scholar
4. Deal, B.E. and Grove, A.S., J. Appl. Phys., 36, 3770 (1965).Google Scholar
5. Hoff, A.M., Tibrewala, A., and Saddow, S.E., Proc. Symp. K. of 2002 MRS Fall Mtg.Google Scholar
6. Cho, W., Kosugi, R., Fukuda, K., Arai, K., and Suzuki, S., Appl. Phys. Lett., 77, 1215–1217 (2002).Google Scholar
7. Lipkin, L.A., Slater, D.B. Jr., and Palmour, J.W., US Patent 5,972,801 (1999).Google Scholar
8. Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., DiVentra, M., Pantelides, S.T., Feldman, L.C., and Weller, R.A., Appl. Phys. Lett., 76, 1713–1715 (2000).Google Scholar
9. Lipkin, L.A., US Patent 6,610,366 (2003).Google Scholar
10. Lipkin, L.A. and Palmour, J.W., IEEE Trans. ED, 46, 525–532 (1999).Google Scholar
11. Spencer, J.E., Borel, R.A., Linxwiler, K.E., and Hoff, A.M., US Patent 4,673,456 (1987).Google Scholar
12. Spencer, J.E., Borel, R.A., and Hoff, A.M., J. Electrochem. Soc., 133, 1922–1925 (1986).Google Scholar
13. Cook, J.M. and Benson, B.W., J. Electrochem. Soc., 130, 2459–2464 (1983).Google Scholar
14. Hoff, A.M. and Ruzyllo, J., Appl. Phys. Lett., 52, 1264–1265 (1988).Google Scholar
15. Singer, P., “a-C:F Carbon: A robust low-k material,” Semicond. Intnl., 10/01/98.Google Scholar
16. Williams, R. and Woods, M.H., J. Appl. Phys., 46, 695–698 (1975).Google Scholar
17. SASS Tools, Semiconductor Diagnostics, Inc., 3650 Spectrum Blvd. Ste. 130; Tampa, FL 33612, USA, 1-813-977-2244, http://www.sditampa.com.Google Scholar
18. Edelman, P., Hoff, A.M., Jastrzebski, L., and Lagowski, J., Proc. SPIE, 2337, 154–164 (1994).Google Scholar
19. Edelman, P., Hoff, A.M., Jastrzebski, L., and Lagowski, J., US Patent 5,773,989 (1998).Google Scholar
20 Hoff, A.M., DeBusk, D.K., and Schanzer, R.W., Paper 3884-17, Proc. SPIE, 3884 (1999).Google Scholar
21. Hoff, A.M., Esry, T.C., and Nauka, K., Sol. St. Technol., 39, (1996).Google Scholar
22. Hoff, A.M. and DeBusk, D.K., Proc. Symp.M1, Electrochem. Soc. 196th Mtg., (1999).Google Scholar
23. Hoff, A.M., Oborina, E., Aravamudhan, S., and Isti, A., Proc. Symp. K2 – 8th Intnl. Symp. Cleaning Technology Semicond. Dev. Manuf., Electrochem. Soc. 204th Mtg., in press (2003).Google Scholar
24. Wilson, M. et al. , in Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures, Buchanan, D.E. et al. ED., MRS Symp. Proc. 592, 345–350 (2000).Google Scholar
25. Edelman, P., Savtchouk, A., Wilson, M., D'Amico, J., Kochey, J.N., Marinskiy, D., and Lagowski, J., European Physical J. Appl. Phys., Proc. DRIP (2003).Google Scholar
26. DiMaria, D.J. and Stathis, J.H., IRPS 2000 Keynote address (2000).Google Scholar