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The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

  • Shulin Gu (a1), Youdou Zheng (a1), Rong Zhang (a1), Ronghua Wang (a1), Ping Han (a1), Xiaodong Huang (a1), Peixing Zhong (a1), Liqun Hu (a1), Shunmin Zhu (a1) and J.N. Chen (a2)...

Abstract

SiH4 and GeH4 Deposition and In-Situ Doping of SiGe/Si Strained Heterostructures by Rapid Thermal Process Very Low Pressure Chemical Vapor Deposition method have been studied in this paper. Ge incorporation rate increases to a maximum value and then decreases as temperature increases, the growth rate of SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances Si deposition rate in SiGe alloy. The Boron and Phosphorus doping would change thegrowth rate of SiGe layers and the sharp doping interfaces in SiGe/Si heterostructures have been obtained.

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