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Growth and Field Emission Properties of Boron Nitride Island Films by Low-energy Ion-assisted Deposition

  • K. Teii (a1), J. H. C. Yang (a1), R. Yamao (a1) and S. Matsumoto (a2)


We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.



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1. Himpsel, F. J., Knapp, J. A., van Vechten, J. A., and Eastman, D. E., Phys. Rev. B 20, 624 (1979).
2. Benjamin, M. C., Wang, C., Davis, R. F., and Nemanich, R. J., Appl. Phys. Lett. 64, 3288 (1994).
3. Powers, M. J., Benjamin, M. C., Porter, L. M., Nemanich, R. J., Davis, R. F., Cuomo, J. J., Doll, G. L., and Harris, S. J., Appl. Phys. Lett. 67, 3912 (1995).
4. Loh, K. P., Sakaguchi, I., Gamo, M. N., Tagawa, S., Sugino, T., and Ando, T., Appl. Phys. Lett. 74, 28 (1999).
5. Wang, R. Z., Wang, B., Wang, H., Zhou, H., Huang, A. P., Zhu, M. K., Yan, H., and Yan, X. H., Appl. Phys. Lett. 81, 2782 (2002).
6. Schlesser, R., McClure, M. T., McCarson, B. L., and Sitar, Z., J. Appl. Phys. 82, 5763 (1997).
7. Jayatissa, A. H., Sato, F., Saito, N., Sawada, K., Masuda, T., and Nakanishi, Y., J. Vac. Sci. Technol. B 17, 237 (1999).
8. Wang, R. Z., Zhou, H., Song, X. M., Wang, B., Wang, H., and Yan, H., J. Cryst. Growth 291, 18 (2006).
9. Moseler, M., Gumbsch, P., Casiraghi, C., Ferrari, A. C., and Robertson, J., Science 309, 1545 (2005).
10. Teii, K., Yamao, R., Yamamura, T., and Matsumoto, S., J. Appl. Phys. 101, 033301 (2007).
11. Matsumoto, S. and Zhang, W. J., Diamond Relat. Mater. 10, 1868 (2001).
12. Teii, K., Matsumoto, S., and Robertson, J., Appl. Phys. Lett. 92, 013115 (2008).
13. Teii, K., Yamao, R., and Matsumoto, S., J. Appl. Phys. 106, 113706 (2009).
14. Teii, K., Hori, T., and Matsumoto, S., Thin Solid Films 519, 1817 (2011).
15. Nose, K., Yang, H. S., and Yoshida, T., Diamond Relat. Mater. 14, 1297 (2005).
16. Sugino, T., Kawasaki, S., Tanioka, K., and Shirafuji, J., Appl. Phys. Lett. 71, 18 (1997).
17. He, B., Zhang, W. J., Zou, Y. S., Chong, Y. M., Ye, Q., Ji, A. L., Yang, Y., Bello, I., and Lee, S. T., Appl. Phys. Lett. 92, 102108 (2008).



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