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Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes

Published online by Cambridge University Press:  15 February 2011

C. L. Chang ,
A. St. Amour ,
L. D. Lanzerotti  and
J. C. Sturm
C. L. Chang
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
A. St. Amour
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
L. D. Lanzerotti
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We have fabricated heterojunction p+ Si1−x−yGexCy/ p+ Si diodes. The SiGeC layers were grown epitaxially on Si (100) substrates by the rapid thermal chemical vapor deposition (RTCVD) technique using methysilane gas as a carbon precursor. The germanium concentration is 20% in these SiGeC alloys and the carbon concentrations are in the range of 0% to 1%. By studying the current-voltage characteristics of these diodes as a function of temperature the valence band discontinuities between SiGeC and Si layers were obtained as a function of carbon concentrations. We have found that the valence band discontinuity of the SiGe/Si heterostructure decreases by II meV when 1% of carbon is incorporated. Photoluminescence (PL) results show that 1% carbon increases the bandgap of strained p+SiGe alloys by 25 meV. This would imply that the conduction band discontinuity of SiGe/Si will decrease by 14 meV when 1% carbon is incorporated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 437
Copyright
Copyright © Materials Research Society 1996

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