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Growth and Characterization of ZnSe/ZnCdSe Diode Structures on (In, Ga)As Buffer Layers

Published online by Cambridge University Press:  25 February 2011

G. C. Hua ,
N. Otsuka ,
W. Xie ,
D. C. Grillo ,
M. Kobayashi  and
R. L. Gunshor
G. C. Hua
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
W. Xie
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
D. C. Grillo
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
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Abstract

ZnSe/ZnCdSe diode structures were grown on (In, Ga)As buffer layers by molecular beam epitaxy. Lattice distortions and defect distributions in buffer layers and diode structures were examined by X-ray diffraction and transmission electron microscopy. Diode structrues with low dislocation densities were obtained by the growth on tetragonally distorted In0.043 Ga0.957 buffer layers, the lattice spacing of which is slightly smaller than that of ZnSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 221
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Park, R. M., Troffer, M. B., Rouleau, C. M., DePuydt, J. M. and Haase, M. A., Appl. Phys. Lett. 57, 2127 (1990).CrossRefGoogle Scholar
2. Ohkawa, K., Karasawa, T., Mitsuyu, T., Jap. J. Appl. Phys. 30, L152 (1991).Google Scholar
3. Haase, M., Qiu, J., DePuydt, J. M. and Cheng, H., Appl. Phys. Lett. 59, 1273(1991).Google Scholar
4. Jeon, H., Ding, J., Xie, W., Grillo, D. C., Patterson, W., Kobayashi, M., Gunshor, R. L. and Nurmikko, A. V., Appl. Phys. Lett. 59, Dec (1991).Google Scholar
5. Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. and Gunshor, R. L., to be published.Google Scholar
6. Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. and Nurmikko, A. V., Appl. Phys. Lett. 60, Jan 27 (1992).Google Scholar
7. Ehrenreich, H. and Hirth, J. P., Appl. Phys. Lett. 46, 668 (1985).Google Scholar
8. Bourret, E. D., Tabache, M. B., Beeman, J. W., Elliot, A. G. and Scott, M., J. Cryst. Growth, 85, 275 (1987).Google Scholar
9. Fujita, S., Nakano, Y., Uemura, T., Tabuchi, M., Noda, S., Takeda, Y. and Sasaki, A., J. Cryst. Growth, 95, 224 (1989).Google Scholar
10. Westwood, D. I., Woolf, D. A. and Williams, R. H., J. Cryst. Growth, 98, 782(1989).Google Scholar
11. Gay, P., Hirsch, P. B. and Kelly, A., Acta Met. 1, 315 (1953).CrossRefGoogle Scholar