Skip to main content Accessibility help
×
Home

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

  • H. Asahi (a1), S. Hasegawa (a1), Y.K. Zhou (a1) and S. Emura (a1)

Abstract

Transition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.

Copyright

References

Hide All
1. Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S. and Iye, Y., Appl. Phys. Lett. 69, 363 (1996).
2. Chiba, D., Takamura, K., Matsukura, F. and Ohno, H., Appl. Phys. Lett. 82, 3020 (2003).
3. Dietl, T., Ohno, H., Matsukura, F., Cibert, J. and Ferrand, D., Science 287, 1019 (2000).
4. Sato, K. and Katayama-Yoshida, H., Semicond. Sci. Technol. 17, 377 (2002).
5. Sonoda, S., Shimizu, S., Sasaki, T., Yamamoto, Y. and Hori, H., J. Cryst. Growth 237, 1358 (2002).
6. Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Chu, S. N. G., and Wilson, R. G., Appl. Phys. Lett. 78, 3475 (2001).
7. Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., and Bedair, S. M., Appl. Phys. Lett. 79, 3473 (2001).
8. Hashimoto, M., Zhou, Y.K., Kanamura, M. and Asahi, H., Solid State Commun. 122, 37 (2002).
9. Hashimoto, M., Tanaka, H., Asano, R., Hasegawa, S., and Asahi, H., Appl. Phys. Lett. 84, 4191 (2004).
10. Park, M., Kuh, K., Myoung, J., Lee, J., Chang, J., Lee, K., Han, S. and Lee, W., Solid State Commun. 124, 11 (2002).
11. Liu, H., Wu, S., Singh, R., Gu, L., Smith, D., Newman, N., Dilley, M., Montes, L. and Simmonds, M., Appl. Phys. Lett. 85, 4076 (2004).
12. Sato, K., Schweika, W., Dederichs, P.H. and Katayama-Yoshida, H., Phys. Rev. B 70, 201202 (2004).
13. Katayama-Yoshida, H., Sato, K., Fukushima, T., Toyoda, M., Kizaki, H., Dinh, V.A. and Dederichs, P.H., J. Mag. Mag. Mat. 310, 2070 (2007).
14. Teraguchi, N., Suzuki, A., Nanishi, Y., Zhou, Y.K., Hashimoto, M. and Asahi, H., Solid State Commun. 122, 651 (2002).
15. Zhou, Y.K., Choi, S.W., Emura, S., Hasegawa, S. and Asahi, H., Appl. Phys. Lett. 92, 062505 (2008).
16. Han, S.Y., Hite, J.K., Thaler, G.T., Frazier, R.M., Abernathy, C.R., Pearton, S.J., Choi, H.K., Lee, W.O., Park, Y.D., Zavada, J.M. and Gwilliam, R., Appl. Phys. Lett. 88, 042102 (2006).
17. Hite, J.K., Frazier, R.M., Davies, R.P., Thaler, G.T., Abernathy, C.R., Pearton, S.J., Zavada, J.M., Brown, E. and Hoemmerich, U., J. Electron. Mat. 36, 391 (2007).
18. Dhar, S., Brandt, O., Ramsteiner, M., Sapega, V.F. and Ploog, K.H., Phys. Rev. Lett. 94, 037205 (2005).
19. Dhar, S., Kammermeier, T., Ney, A., Perez, L., Ploog, K., Melnikov, A. and Wieck, A.D., Appl. Phys. Lett. 89, 062503 (2006).
20. Dalpian, G.M. and Wei, S.H., Phys. Rev. B 72, 115201 (2005).
21. Mitra, C. and Lambrecht, W.R.L., Phys. Rev. B 80, 081202(R) (2009).
22. Hashimoto, M., Tanaka, H., Emura, S., Kim, M.S., Honma, T., Umesaki, N., Zhou, Y.K., Hasegawa, S. and Asahi, H., J. Cryst. Growth 273, 149 (2004).
23. Kim, M. S., Zhou, Y.K., Funakoshi, M., Emura, S., Hasegawa, S. and Asahi, H., Appl. Phys. Lett. 89, 232511 (2006).
24. Mishra, J.K., Dhar, S., Brandt, O., Solid State Commun. 150, 2370.
25. Choi, S.W., Zhou, Y. K., Kim, M. S., Kimura, S., Emura, S., Hasegawa, S. and Asahi, H., Phys. Stat. Sol. (a) 203, 2774 (2006).
26. Zhou, Y.K., Choi, S.W., Kimura, S., Emura, S., Hasegawa, S. and Asahi, H., Thin Solid Films 518, 5659 (2010).
27. Zhou, Y.K., Choi, S.W., Kimura, S., Emura, S., Hasegawa, S. and Asahi, H., J. Supercond and Nov. Magn. 20, 429 (2007) .
28. Zhou, Y.K., Choi, S.W., Emura, S., Hasegawa, S. and Asahi, H., Appl. Phys. Lett. 92, 062505 (2008).
29. Hashimoto, M., Araki, K., Sato, K., Asahi, H. and Katayama-Yoshida, H., Extended Abstracts of the 8th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors (Sendai, Japan, 2002) pp. 165168.
30. Tawil, S.N.M., Kakimi, R., Krishnamurthy, D., Ishimaru, M., Emura, S., Tambo, H., Hasegawa, S. and Asahi, H., Phys. Stat. Sol. Rap. Res. Lett. 4, 308 (2010).
31. Tawil, S.N.M., Krishnamurthy, D., Ishimaru, M., Emura, S., Hasegawa, S. and Asahi, H., Phys. Stat. Sol. (in press).
32. Zhou, Y.K., Emura, S., Hasegawa, S. and Asahi, H., Phys. Stat. Sol. (in press).

Keywords

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

  • H. Asahi (a1), S. Hasegawa (a1), Y.K. Zhou (a1) and S. Emura (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed