Skip to main content Accessibility help
×
Home

Growth and Characterization of InP/GaAs on Soi by Mocvd

  • N.H. Karam (a1), V. Haven (a1), S.M. Vernon (a1), F. Namavar (a1), N. El-Masry (a2), N. Haegel (a3) and M.M. Al-Jassim (a4)...

Abstract

Epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by IMplantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films.

Copyright

References

Hide All
1.See Mat. Res. Soc., Symp. Proc. 107 (1988),147 (1989); Mat. Res. Soc. “Heteroepitaxy on Si,” Vols. I and II, 67 (1986) and 91 (1987).
2. Janstizebski, L., RCA Review, 44, 250 (1983).
3. Weinberg, I., Swartz, C., and Hart, R., 9th Space Photovoltaic Research and Tech. Conf., Cleveland, OH (1988); I. Weinberg, C. Swartz, and M. Yamaguchi, NASA Tech. Report 8835 (1986); I. Weinberg, C. Swartz, and R. Hart, 18th IEEE PVSEC, Las Vegas, NV (1985).
4.See IEEE Transactions on Nuclear Science, Vol. NS–34 (1987).
5. Yamaguchi, Masafumi, 3rd Int. PVSEC-3 Proceedings, p. 471 (1987); M. Yagamuchi et al., J. Appl. Phys., 55, 1429 (1984); J. Appl. Phys. 23, 302 (1984); Appl. Phys. Let. 44, 611 (1984).
6. Anderson, W.A. et al. , Proceedings of SPRAT Conf., Cleveland, OH, p. 94 (1988): W.A. Anderson and J. Boos, IEEE Trans. NS-32, 4001 (1985); W.A. Anderson et al., IEEE Trans. NS-31, 1467 (1984).
7. Karam, N.H., Haven, V.E., Vernon, S.M., Randani, J., El-Masry, N.A., and Haegel, N., Proceedings of the Mat. Res. Soc., Fall Meeting, Symp. D, Boston, MA (1989).
8. Vernon, S.M. et al. , Proceedings of GaAs and Related Comp. Conf., Atlanta, GA (1988); S.J. Pearton, K.T. Short, A.T. MacLander, C.R. Abernathy, V.P. Mazzi, N.M. Hagel, M.M. Al-Jassim, S.M. Vernon, and V. Haven, J. Appl. Phys., 65, 1089, (1989).
9. Razeghi, M., Mat. Res. Soc. Symp. Proc. 116, 297 (1988); M. Razeghi et al., Appl. Phys. Lett. 53, 2389 (1988).

Growth and Characterization of InP/GaAs on Soi by Mocvd

  • N.H. Karam (a1), V. Haven (a1), S.M. Vernon (a1), F. Namavar (a1), N. El-Masry (a2), N. Haegel (a3) and M.M. Al-Jassim (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed