Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T21:17:08.245Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of InP/GaAs on Soi by Mocvd

Published online by Cambridge University Press:  28 February 2011

N.H. Karam ,
V. Haven ,
S.M. Vernon ,
F. Namavar ,
N. El-Masry ,
N. Haegel  and
M.M. Al-Jassim
N.H. Karam
Affiliation:
Spire Corporation, Bedford, MA 01730
V. Haven
Affiliation:
Spire Corporation, Bedford, MA 01730
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
F. Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730
N. El-Masry
Affiliation:
North Carolina State University, Raleigh, NC 27695
N. Haegel
Affiliation:
University of California, Los Angeles, CA 90024
M.M. Al-Jassim
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
Get access

Abstract

Epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by IMplantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 247
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.See Mat. Res. Soc., Symp. Proc. 107 (1988),147 (1989); Mat. Res. Soc. “Heteroepitaxy on Si,” Vols. I and II, 67 (1986) and 91 (1987).Google Scholar
2. Janstizebski, L., RCA Review, 44, 250 (1983).Google Scholar
3. Weinberg, I., Swartz, C., and Hart, R., 9th Space Photovoltaic Research and Tech. Conf., Cleveland, OH (1988); I. Weinberg, C. Swartz, and M. Yamaguchi, NASA Tech. Report 8835 (1986); I. Weinberg, C. Swartz, and R. Hart, 18th IEEE PVSEC, Las Vegas, NV (1985).Google Scholar
4.See IEEE Transactions on Nuclear Science, Vol. NS–34 (1987).Google Scholar
5. Yamaguchi, Masafumi, 3rd Int. PVSEC-3 Proceedings, p. 471 (1987); M. Yagamuchi et al., J. Appl. Phys., 55, 1429 (1984); J. Appl. Phys. 23, 302 (1984); Appl. Phys. Let. 44, 611 (1984).Google Scholar
6. Anderson, W.A. et al. , Proceedings of SPRAT Conf., Cleveland, OH, p. 94 (1988): W.A. Anderson and J. Boos, IEEE Trans. NS-32, 4001 (1985); W.A. Anderson et al., IEEE Trans. NS-31, 1467 (1984).Google Scholar
7. Karam, N.H., Haven, V.E., Vernon, S.M., Randani, J., El-Masry, N.A., and Haegel, N., Proceedings of the Mat. Res. Soc., Fall Meeting, Symp. D, Boston, MA (1989).Google Scholar
8. Vernon, S.M. et al. , Proceedings of GaAs and Related Comp. Conf., Atlanta, GA (1988); S.J. Pearton, K.T. Short, A.T. MacLander, C.R. Abernathy, V.P. Mazzi, N.M. Hagel, M.M. Al-Jassim, S.M. Vernon, and V. Haven, J. Appl. Phys., 65, 1089, (1989).Google Scholar
9. Razeghi, M., Mat. Res. Soc. Symp. Proc. 116, 297 (1988); M. Razeghi et al., Appl. Phys. Lett. 53, 2389 (1988).Google Scholar