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Growth and Characterization of Inas Quantum Dots on Silicon

Published online by Cambridge University Press:  10 February 2011

L. Hansen ,
A. Ankudinov ,
F. Bensing ,
J. Wagner ,
G. Ade ,
P. Hinze ,
V. Wagner ,
J. Geurts  and
A. Waag
L. Hansen
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
A. Ankudinov
Affiliation:
on leave from loffe Institute, Polytechnicheskaya 26, St. Petersburg, Russia
F. Bensing
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
J. Wagner
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
G. Ade
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
P. Hinze
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
V. Wagner
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
J. Geurts
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
A. Waag
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
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Abstract

Up to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Yorikawa, H., and Muramatsu, S., J. Appl. Phys. 84 (6), 3354 (1998).Google Scholar
2.Huisken, F., Kohn, B., and Paillard, V., Appl. Phys. Lett. 74(25), 3776 (1999).Google Scholar
3.Neufeld, E., Sticht, A., Luigart, A., Brunner, K., and Abstreiter, G., Appl. Phys. Lett. 73 (21), 3061 (1998).Google Scholar
4.Madhukar, A., Xie, Q., Chen, P., and Konkar, A., Appl. Phys. Lett. 64 (20), 2727 (1994).Google Scholar
5.Joyce, B. A., Jones, T. S., and Belk, J. G., J. Vac. Sci. Technol, B 16(4), 2373 (1998).Google Scholar
6.Xie, Q., Kalburge, A., Chen, P., Madhukar, A., Photonics Technology Lett. 8 (8), 965 (1996).Google Scholar
7.Egorov, A. Yu, Kovsh, A.R., Ustinov, V.M., Zhukov, A.E., Maksimov, M.V., Cirlin, G.E., Ledentsov, N.N., Bimberg, D., Werner, P., and Alferov, Zh. I., J. Crystal Growth 201/202, 1202 (1999).Google Scholar
8.Hansen, L., Bensing, F., and Waag, A., Jpn. J. Appl. Phys., 38 (11), 6219 (1999).Google Scholar
9.Leonard, D., Pond, K., and Petroff, P. M., Phys. Rev. B50 (16), 11687 (1994).Google Scholar
10.Sharma, P. C., Alt, K. W., Yeh, D. Y., Wang, D., and Wang, K. L., J. Electronic Mat. 28 (5), 432 (1999).Google Scholar
11.Legrand, B., Grandidier, B., Nys, J. P., Stievenard, D., Gerard, J. M., and Thierry-Mieg, V.Appl. Phys. Lett. 73 (1), 96 (1998).Google Scholar
12.Bottomley, D. J., Appl. Phys. Lett. 72 (7), 783 (1998).Google Scholar
13.Stransky, I. N., Zeitschrift fuir Physik 119, 22(1942).Google Scholar
14.Frenken, J. W. M., Maree, P. M. J., Veen, J. F. van derPhys. Rev. B34 (11),7506 (1986).Google Scholar
15.Rieutord, F., Simon, R., Conradt, R., and Mfiller-Buschbaum, P.Europhys. Lett. 37 (8), 565 (1997).Google Scholar
16.Trittibach, R., Ch. Grfitter, Bilgram, J. H., Phys. Rev. B5O (4), 2529 (1994).Google Scholar
17.McRae, E. G., Malic, R. A., Phys. Rev. Lett. 58 (14), 1437 (1987).Google Scholar
18.Barin, I., Knacke, O., Kubaschewski, O., Thermochemical properties of inorganic substances (Springer, Berlin, 1973), p. 32 9.Google Scholar
19.Chikichev, S. I., Chikichev, I. S., proceedings of 23rd Int. Symp. Compound Semiconductors, St. Petersburg, Russia, 1996, p. 275.Google Scholar