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Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates

Published online by Cambridge University Press:  28 February 2011

T.P. Humphreys ,
K. Das ,
N.R. Parikh ,
J.B. Posthill ,
R.J. Nemanich ,
C.J. Miner ,
C.A. Sukow ,
M.K. Summerville ,
P.L. Ross  and
R.J. Markunas
T.P. Humphreys
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
K. Das
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599-3255
J.B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
C.J. Miner
Affiliation:
Bell-Northern Research Ltd., Ottawa, Ontario K1Y 4H7, Canada
C.A. Sukow
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
M.K. Summerville
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
P.L. Ross
Affiliation:
Bell-Northern Research Ltd., Ottawa, Ontario K1Y 4H7, Canada
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

A systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 297
Copyright
Copyright © Materials Research Society 1989

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References

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