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Growth and Characterization of Germanium-based type I Clathrate Thin Films Deposited by Pulsed Laser Ablation

Published online by Cambridge University Press:  01 February 2011

Sarath Witanachchi ,
R. Hyde ,
H. S. Nagaraja ,
M. Beekman ,
G. S. Nolas  and
P. Mukherjee
Sarath Witanachchi
Affiliation:
switanac@cas.usf.edu, University of South Florida, Department of Physics, 4202 East Fowler Ave., Tampa, Florida, 33620, United States, 813 974 2789, 813 974 5318
R. Hyde
Affiliation:
rhhyde@helios.acomp.usf.edu, University of South Florida, Department of Physics, United States
H. S. Nagaraja
Affiliation:
hosakoppa@yahoo.com, University of South Florida, Department of Physics, United States
M. Beekman
Affiliation:
mbeekman@helios.acomp.usf.edu, University of South Florida, Department of Physics, United States
G. S. Nolas
Affiliation:
gnolas@cas.usf.edu, University of South Florida, Department of Physics, United States
P. Mukherjee
Affiliation:
pritish@cas.usf.edu, University of South Florida, Department of Physics, United States
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Abstract

Thin films of clathrate material have been grown using the laser ablation technique on a variety of substrates. Films deposited on silicon substrates exhibited a significant deficiency of Ga and Ge while the stoichiometry was preserved in films deposited on quartz, sapphire, and glass substrates. Ablation characteristics of the clathrate target for laser radiation at three different wavelengths in the UV, visible and IR were studied. The UV and IR laser wavelengths produce low ablation thresholds and high growth rates. Crystalline films were obtained above a growth temperature of 400°C. Conductivity measurements on the films at low current injection (<40 µA) showed semiconducting behavior. At high currents the films demonstrated a semiconductor-to-metal transition for temperatures lower than 150 K.

Keywords

ablationthermoelectricityfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F10-03
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Semiconductors and Semimetals, V. 69, 70, & 71, ed. Tritt, T.M., (Academic Press, 2001).Google Scholar
2. Slack, G.A., “New Materials and Performance Limits for Thermoelctric Cooling,” CRC Handbook of Thermoelectrics, ed. Rowe, D.M. (CRC Press, 1995), pp. 407–440.Google Scholar
3. Nolas, G.S., Morelli, D.T., and Tritt, T.M., Annu. Rev. Mater. Sci. 29, 89 (1999).Google Scholar
4. Uher, C., “Skutterudites: Prospective Novel Thermoelectrics,” Semiconductors and Semimetals, V. 69, ed. Tritt, T.M. (Academic Press, 2001), pp. 139–253.Google Scholar
5. Slack, G.A., Mater. Res. Soc. Symp. Proc. 478, 47 (1997).Google Scholar
6. Nolas, G.S., Cohn, J.L., Slack, G.A., and Schujman, S.B., Appl. Phys. Lett. 73, 178 (1998).Google Scholar
7. Cros, C., Pouchard, M., and Hagenmuller, P., J. Solid State Chem. 2, 570 (1970).Google Scholar
8. Cohn, J.L, Nolas, G.S., Fessatidis, V., Metcalf, T.H., and Slack, G.A., Phys. Rev. Lett. 82, 779 (1999).Google Scholar
9. Witanachchi, S., Ahmed, K., Sakthivel, P. and Mukherjee, P., Applied Physics Lettters, 66, 1469–1471 (1995).Google Scholar
10. Mukherjee, P., Cuff, J.B. and Witanachchi, S., Applied, J. Surface Science, 127–129, 620 (1998).Google Scholar
11. Mukherjee, P., Chen, Shudong, Cuff, J. B., Sakthivel, P., Witanachchi, S., Journal of Applied Physics, Volume 91, Issue 4, 1828–1836, (2002).Google Scholar