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Growth and Characterization of GaPNAs on Si

Published online by Cambridge University Press:  01 February 2011

John Geisz ,
J. M. Olson ,
W. E. McMahon ,
T. Hannappel ,
K. Jones ,
H. Moutinho  and
M. M. Al-Jassim
John Geisz
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
J. M. Olson
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
W. E. McMahon
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
T. Hannappel
Affiliation:
Hahn-Meitner Institute Berlin, Germany
K. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
H. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, U.S.A.
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Abstract

The dilute nitrogen alloy GaPNAs can be lattice matched to silicon with band gaps ranging from 2.3 eV to less than 1.7eV making it of special interest for photovoltaic applications. We have studied the growth and structural quality of the alloy grown on vicinal Si(001) and GaP(001) substrates by MOCVD. Using a particular nucleation scheme, we have deposited 1-μm thick layers that are crack-free and exhibit narrow x-ray line widths. The FWHM of the (004) x-ray reflection from a GaP1−xNx epilayer decreases dramatically from ∼300 arcsec for x=0 to 18 arcsec for x = 0.021. The band gap of this alloy is 1.96 eV. With the addition of As (and more N), the x-ray line widths tend to increase slightly to 27 arcsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z1.10
Copyright
Copyright © Materials Research Society 2004

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References

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