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Growth and Characterization of Epitaxial PbTiO3Thin Films On Mgo

Published online by Cambridge University Press:  15 February 2011

K. Zhang ,
B. Pashmakov ,
R. Mogilevsky ,
H. M. Jaeger ,
Ming Xu ,
M. J. Kramer  and
A. Goldman
K. Zhang
Affiliation:
The James Franck Institute, The University of Chicago, Chicago, IL 60637
B. Pashmakov
Affiliation:
The James Franck Institute, The University of Chicago, Chicago, IL 60637
R. Mogilevsky
Affiliation:
The James Franck Institute, The University of Chicago, Chicago, IL 60637
H. M. Jaeger
Affiliation:
The James Franck Institute, The University of Chicago, Chicago, IL 60637
Ming Xu
Affiliation:
The James Franck Institute, The University of Chicago, Chicago, IL 60637
M. J. Kramer
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011
A. Goldman
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011
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Abstract

Epitaxial PbTiO3 thin films have been grown on single-crystal MgO (100) substrates using metalorganic chemical vapor deposition technique. The energy gap was determined from optical absorption data to be Eg= 3,425 eV. Secondary ion mass spectrometry data showed uniform distribution of Pb, Ti and O atoms with no traces of carbon contamination. Atomic force microscopy studies showed different surface morphology for different film growth rates. In-situ X-ray diffraction data indicate that the tetragonal-to-cubic structural phase transition occurs at about 500–520°C. Above 750 °C the films exhibit multi-phase character, the textured PbTiO3 phase co-existing with a polycrystalline Pb2Ti2O6 structure and a possible Mg-containing impurity phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 355
Copyright
Copyright © Materials Research Society 1994

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