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Growth and characterization of combined single-crystalline and polycrystalline CVD diamond wafer

Published online by Cambridge University Press:  02 February 2015

A.L. Vikharev
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
A.B. Muchnikov
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
D.B. Radishev
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
V.A. Isaev
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
O.A. Ivanov
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
A.M. Gorbachev
Affiliation:
Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov Street, Nizhny Novgorod, 603950, Russia
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Abstract

The study of combined single-crystalline and polycrystalline chemical vapor deposited (CVD) diamond wafers is reported. Combined CVD diamond wafers up to 75 mm in diameter were grown, which consist of great number of single-crystalline diamond sections grafted in a polycrystalline diamond matrix. The grown combined CVD wafers were characterized by the Raman spectroscopy. It was shown that in the grafting process, the single- and polycrystalline areas of the combined wafer undergo insignificant stresses, which can be released during the thermal annealing process. Fabricated combined CVD diamond can be used in various applications that employ unique properties of diamond and potentially suitable for industrial use.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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