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Growth and Characterization of AllnGaN/InGaN Heterostructures

  • J. C. Roberts (a1), F. G. Mcintosh (a1), M. Aumer (a1), V. Joshkin (a1), K. S. Boutros (a1), E. L. Piner (a2), Y. W. He (a2), N. A. El-Masry (a2) and S. M. Bedair (a1)...

Abstract

The emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

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