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Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure

  • Chiao-Yun Chang (a1), Huei-Min Huang (a1), Yu-Pin Lan (a1), Tien-Chang Lu (a1), Hao-Chung Kuo (a1), Shing-Chung Wang (a1), Li-Wei Tu (a2) and Wen-Feng Hsieh (a1)...

Abstract

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10 $\bar 1$ 3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1 $\bar 1$ 02) // a-GaN (11 $\bar 2$ 0) and ZnGa2O4 (220) // semi-polar GaN (10 $\bar 1$ $\bar 3$ ). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

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