Skip to main content Accessibility help

Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure

  • Chiao-Yun Chang (a1), Huei-Min Huang (a1), Yu-Pin Lan (a1), Tien-Chang Lu (a1), Hao-Chung Kuo (a1), Shing-Chung Wang (a1), Li-Wei Tu (a2) and Wen-Feng Hsieh (a1)...


The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10 $\bar 1$ 3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1 $\bar 1$ 02) // a-GaN (11 $\bar 2$ 0) and ZnGa2O4 (220) // semi-polar GaN (10 $\bar 1$ $\bar 3$ ). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.


Corresponding author


Hide All
[1] Auret, F.D., Goodman, S., Legodi, M., Meyer, W.E., Look, D., Applied physics letters, 80, 1340 (2002).
[2] Xu, H., Liu, Y., Liu, Y., Xu, C., Shao, C., Mu, R., Applied Physics B: Lasers and Optics, 80, 871 (2005).
[3] Kumar, M., Kim, T.H., Kim, S.S., Lee, B.T., Applied physics letters, 89, 112103–1 (2006).
[4] Gorbatenko, L., Novodvorsky, O., Panchenko, V.Y., Khramova, O., Cherebilo, Y.A., Lotin, A., Wenzel, C., Trumpaicka, N., Bartha, J., Laser physics, 19, 1152 (2009).
[5] Baker, T.J., Haskell, B.A., Wu, F., Fini, P.T., Speck, J.S., Nakamura, S., Japanese journal of applied physics, 44, L920 (2005).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed