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Green Emission from Er-Doped AlN Thin Films Prepared by RF Magnetron Sputtering

Published online by Cambridge University Press:  14 March 2011

V. I. Dimitrova
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
F. Perjeru
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
Hong Chen
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
M. E. Kordesch
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
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Abstract

Thin films of Er doped AlN, ∼ 200 nm thick, were grown on indium tin oxide/aluminum titanium oxide/glass substrates using RF magnetron sputtering in a pure nitrogen atmosphere. To optically activate Er all films were subject to post-deposition annealing in flowing nitrogen atmosphere at atmospheric pressure at temperatures between 1023-1223 K for 10-60 minutes. The visible cathodoluminescence (CL) in the green was detected at both 11 K and 300K. The strongest CL peaks were observed at 558 nm and 537 nm (11 K), which correspond to the transitions from 4S3/2 and 2H11/2 to the 4I15/2 ground level. Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. The turn-on voltage was found to be around 80-100 V for our ACTFEL devices. The intensity of the EL emission rapidly increases with the voltage increasing in the investigated range of 110-130 V.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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