Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T05:58:52.966Z Has data issue: false hasContentIssue false
  • English
  • Français

Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]

Published online by Cambridge University Press:  15 February 2011

Dirk Rose  and
Ullrich Pietsch
Dirk Rose
Affiliation:
Institut für Festkörperphysik der Universität Potsdam, D-14415 Potsdam, Germany
Ullrich Pietsch
Affiliation:
Institut für Festkörperphysik der Universität Potsdam, D-14415 Potsdam, Germany
Get access

Abstract

The depth profile of the defect structure in strained and partially relaxed Ga0.8In0.2As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm.

The strength of the method is demonstrated on a sample series with similar thickness of the Ga0.8In0.2As sublayers, ta, but with varying thickness of the GaAs barrier, tb.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing ta the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 251
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Matthews, J.W. and Blakeslee, A.E., J.Cryst.Growth 27 118 (1974)Google Scholar
2. Gourley, P.L., Fritz, I.J. and Dawson, L.R., Appl. Phys. Lett. 52 377 (1988)Google Scholar
3. Grandjean, N. and Massies, J., Jour. of Cryst. Growth 134 51 (1993)Google Scholar
4. Tapfer, L. and Ploog, K. Phys.Rev. B40 9802 (1989)Google Scholar
5. Fewster, P.F. and Andrew, N.L. J.Appl.Phys. 74 3121 (1993)Google Scholar
6. Pietsch, U., Seifert, W., Fornell, J.-O., Rhan, H., Metzger, H., Rugel, S. and Peisl, J., Appl.Surf.Sci. 54 502 (1992)Google Scholar
7. Pietsch, U., Metzger, T.H., Rugel, S., Jenichen, B. and Robinson, I.K., J.Appl.Phys. 74 2381 (1993)Google Scholar
8. Hovinen, M., Salokatve, A. and Asonen, H., J.Appl.Phys. 69 (1991) 3378 Google Scholar
9. Rose, D., Pietsch, U., Förster, A. and Metzger, T.H. Physica B 198 256 (1994)Google Scholar
10. Wang, S.M., Andersson, T.G., Lai, Z.H. and Thordson, J.V., Semicond.Sci.Technol. 9 1230 (1994)Google Scholar
11. Ming, Z.H., Soo, Y.L., Huang, S., Kao, Y.H., Stair, K., Devane, G. and Choi-Feng, C., Appl.Phys.Lett. 66 165 (1995)Google Scholar
12. Marschner, T., Lutgen, S., Volk, M., Stolz, W., Gobed, G.O., Jin-Phillipp, N.Y. and Phillipp, F., Superlattices & Microstructures 15 183 (1994)Google Scholar
13. Durose, K., Turnbull, A. and Brown, P., Mate. Sci. Eng., B16 96 (1993)Google Scholar
14. Li, J., Mai, Z., and Cui, S. J.Appl.Phys. 76 810 (1994); ibid.and J. Zhou, Appl.Phys.Lett. 63 3327 (1993)Google Scholar
15. Rose, D., Pietsch, U., Förster, A. and Metzger, T.H., Nucl.lnstr.&Methods (1995)in pressGoogle Scholar
16. Rose, D., Pietsch, U., Gottschalch, V. and Rhan, H. J.Phys.D:Cond.Matter 28 1 (1995)Google Scholar