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Graphitic Schottky Contacts to Si formed by Energetic Deposition

  • Mohammad Saleh N Alnassar (a1), Patrick W. Leech (a1), Geoff K. Reeves (a1), Anthony S. Holland (a1), Desmond W. M. Lau (a2), Dougal G. McCulloch (a2), Hiep N. Tran (a3) and Jim G. Partridge (a2)...

Abstract

Carbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.

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