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Graphene Adsorbed on Corundum Surface: Clean Interface and Band Gap Opening

  • Bing Huang (a1), Qiang Xu (a1) and Su-Huai Wei (a1)

Abstract

Using advanced first-principles calculations, we have studied the structural and electronic properties of graphene/α-Al2O3 interfaces and show that α -Al2O3 is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of ~180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which is significantly larger than graphene on other popular substrates.

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