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Grain Growth and Phase Formation in Ion Irradiated/Annealed Thin Ni-Al Alloys Films

Published online by Cambridge University Press:  25 February 2011

Dale E. Alexander
Affiliation:
Department of Nuclear Engineering, university of Michigan, Ann Arbor, MI 48109
Gary S. Was
Affiliation:
Department of Nuclear Engineering, university of Michigan, Ann Arbor, MI 48109
Lynn E. Rehn
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
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Abstract

Ion irradiation and annealing studies were performed on Ni, Ni-20 at.%Al multilayers and Ni-20 at.%Al co-evaporated thin films. Xe+ ions were used to irradiate the films and homogenize the multilayers at room temperature. Irradiation of alloy films formed a metastable, supersaturated solid solution of γ phase and an HCP phase. Ion induced grain growth occurred in all films. A factor of 2 greater growth was observed in Ni-Al multilayers compared with coevaporated films irradiated to the same dose. The enhancement is attributed to a heat of mixing effect. Post irradiation annealing of the mixed multilayers formed γ*, the morphology of which was dependent upon the presence of Cu in the films due to substrate mixing from the support grid.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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