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Grain Boundaries in High Thermal Conductivity Aluminum Nitride.

Published online by Cambridge University Press:  25 February 2011

Stuart Mckernan ,
M. Grant Norton  and
C. Barry Carter
Stuart Mckernan
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
M. Grant Norton
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

The benefits of AIN as a substrate material for the electronics packaging industry appear to be limited by the deleterious effects of boundaries in the polycrystalline material. Some observations on different types of boundary in AIN using several complementary techniques are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 229
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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