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Grain Boundaries in Crystallized Silicon Thin Films

  • N. M. Johnson (a1), D. K. Biegelsen (a1) and M. D. Moyer (a1)

Abstract

The presence of residual grain boundaries in laser-crystallized thin films of silicon necessitates an understanding of their properties and effects on device operation. In CW laser crystallized silicon islands, lateral p-n junction diodes have been used to evaluate the following: (1) enhanced arsenic diffusion along grain boundaries, (2) current-voltage characteristics, and (3) effects of hydrogenation on diode operation. To study the process of hydrogen passivation, deuterium has been used as a readily identifiable isotope which duplicates hydrogen chemistry. From secondary-ion mass spectrometry, diffusion of deuterium in single-crystal and polycrystalline silicon at low temperatures (e.g., 350 C) clearly demonstrates that grain-boundary diffusion dominates bulk diffusion.

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Grain Boundaries in Crystallized Silicon Thin Films

  • N. M. Johnson (a1), D. K. Biegelsen (a1) and M. D. Moyer (a1)

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