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Gettering of Impurities by Incoherent Light Annealed Porous Silicon

Published online by Cambridge University Press:  15 February 2011

V. E. Borisenko  and
A. M. Dorofeev
V. E. Borisenko
Affiliation:
Minsk Radioengineering Institute, P.Browka 6, Minsk, USSR
A. M. Dorofeev
Affiliation:
Minsk Radioengineering Institute, P.Browka 6, Minsk, USSR
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Abstract

The application of electrochemically formed porous silicon to getter Cu and Au atoms in silicon crystals during incoherent light annealing for 4 to 20 sec is reported. Exposure light power density of 30 W/cm2 was used to heat the samples up to 950 °C. Improvement of lifetime related to Au and Cu gettering with porous silicon has been observed. Excess impurity interstitials and their enhanced diffusion are supposed to be responsible for the gettering effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 375
Copyright
Copyright © Materials Research Society 1983

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References

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