Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-19T22:05:36.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge-rich Si1-XGeX Nanocrystal Formation by the Oxidation of As-Deposited Thin Amorphous Si0.7Ge0.3 Layer

Published online by Cambridge University Press:  01 February 2011

Tae-Sik Yoon  and
Ki-Bum Kim
Tae-Sik Yoon
Affiliation:
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Get access

Abstract

Ge-rich Si1-XGeX nanocrystals are formed by the selective oxidation of Si during the dry oxidation of an amorphous Si0.7Ge0.3 layer. The oxidation kinetics of the alloy film shows the activation energies of linear and parabolic rate constants are about 1.35 and 1.02 eV, respectively, based on the model proposed by Deal and Grove. In addition, as a result of the selective oxidation of Si and Ge pile-up during the oxidation process, Ge-rich Si1-XGeX nanocrystals are formed with the size of 5.6 ± 1.7 nm and the spatial density of 3.6×1011/cm2 at 600°C. At higher temperature of 700 and 800°C, the size of nanocrystal is increased to about 20 nm. The nanocrystals formation by oxidation is thought to be due to higher oxidation rate at grain boundary than at bulk grain. Therefore, the dependence of size on temperature is explained with the grain size determined by solid phase crystallization of amorphous film, oxidation rate, and grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R10.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Likharev, K. K., IBM J. Res. Dev. 32, 144 (1998).Google Scholar
2. Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., and Seki, K., IEEE Trans. Electron Devices 41, 1628 (1994).Google Scholar
3. Tiwari, S., Rana, F., Hanafi, H., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).Google Scholar
4. Yoon, T.S., Kwon, J.Y., Lee, D.H., Kim, K.B., Min, S.H., Chae, D.H., Kim, D. H., Lee, J. D., Park, B.G., and Lee, H. J., J. Appl. Phys. 87, 2449 (2000).Google Scholar
5. Kim, J.W., Ryu, M.K., Kim, K.B., and Kim, S.J., J. Electrochem. Soc. 143, 363 (1996).Google Scholar
6. Deal, B. E. and Grove, A. S., J. Appl. Phys. 36, 3770 (1965).Google Scholar
7. Yoon, Tae-Sik, Formation of Si 1-X Ge X Quantum Dot for the Application to Single Electron Devices, Ph.D thesis, Seoul National University, Seoul, Korea, p.125 (2002).Google Scholar