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Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film

  • Takanori Kiguchi (a1), Kenta Aoyagi (a2), Toyohiko J. Konno (a3), Satoru Utsugi (a4), Tomoaki Yamada (a5) and Hiroshi Funakubo (a6)...

Abstract

The nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.

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