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The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination

Published online by Cambridge University Press:  25 February 2011

J. Kanicki  and
M. Sankaran
J. Kanicki
Affiliation:
IBM Research Division Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
M. Sankaran
Affiliation:
IBM Research Division Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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Abstract

We report, for the first time, on the stretched-exponential time dependence of the generation and bleaching of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to the sub-bandgap illumination at room temperature in vacuum. We also propose a mechanism which we believe is responsible for the generation and bleaching of the positive charge in the nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 731
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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