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General Model of Diffusion of Interstitial Oxygen in Silicon and Germanium Crystals

Published online by Cambridge University Press:  01 February 2011

Vasilii Gusakov
Vasilii Gusakov*
Affiliation:
Institute of Solid State and Semiconductor Physics, P. Brovka str. 17, Minsk, 220072, Belarus.
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Abstract

A theoretical modeling of the oxygen diffusivity in silicon and germanium crystals both at normal and high hydrostatic pressure has been carried out using molecular mechanics, semiempirical and ab-initio methods. It was established that the diffusion process of an interstitial oxygen atom (Oi) is controlled by the optimum configuration of three silicon (germanium) atoms nearest to Oi. The calculated values of the activation energy δEa (Si) = 2.59 eV, δEa (Ge) = 2.05 eV and pre-exponential factor D0 (Si) = 0.28 cm2 s-1, D0 (Ge) = 0.39 cm2 s-1 are in a good agreement with experimental ones and for the first time describe perfectly an experimental temperature dependence of the Oi diffusion constant in Si crystals (T=350 - 1200°C). Hydrostatic pressure (P≤80kabar) results in a linear decrease of the diffusion barrier (∂PδEa(P)= -4.38 10-3 eV kbar-1 for Si crystals). The calculated pressure dependence of Oi diffusivity in silicon crystals agrees well with the pressure-enhanced initial growth of oxygenrelated thermal donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.20
Copyright
Copyright © Materials Research Society 2005

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