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A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

  • Yuan-Min Li (a1)

Abstract

A general photoconductivity formula is derived for the case of a semiconductor steady state photocarrier grating (SSPG)1. It is shown that, under the condition of weak applied electric field, the ambipolar diffusion length can be determined by the SSPG technique1 without the lifetime-regime restriction2,3 if the lifetime of photocarriers is known. The general formula presented here is reduced to the simple lifetime-regime formula1–3 under the condition of fast dielectric relaxation.

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Ritter, D., Weiser, K., and Zeldov, E., J. Appl. Phys. 62, 4563 (1987).
2. Ritter, D., Zeldov, E., and Weiser, K., Phys. Rev. B 38, 8296 (1988).
3. Weiser, K. and Ritter, D., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, New Jersey, 1989), p. 871.
4. Due to space limitation, the algebraic details will be published elsewhere.
5. Smith, R.A., Semiconductors (2nd ed.), Cambridge University Press, New York, 1978.

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A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

  • Yuan-Min Li (a1)

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