Skip to main content Accessibility help
×
Home

GaSb on Si: Structural Defects and Their Effect on Surface Morphology and Electrical Properties

  • Shailesh Kumar Madisetti (a1), Vadim Tokranov (a1), Andrew Greene (a1), Steven Novak (a1), Michael Yakimov (a1), Serge Oktyabrsky (a1), Steven Bentley (a2) and Ajey P. Jacob (a2)...

Abstract

The paper reports on the growth of group III-Sb’s on silicon, substrate preparation, optimization of AlGaSb metamorphic buffer, formation of defects (threading dislocations, microtwins and anti-phase boundaries) and their effect on the surface morphology and electrical properties of these high hole mobility materials for future III-V CMOS technology. Defect density was found to be 2-3x higher than in similar structures grown on GaAs, resulting in 2x higher roughness. Defects also result in background p-type doping well above 1017 cm-3 causing inversion of polarity from n-type to p-type in thin n-type doped GaSb. MOS Capacitors fabricated on these buffers demonstrate similar characteristics to higher quality GaSb-on-GaAs. The highest hole mobility obtained in a strained InGaSb QW MOS channel grown on silicon is ∼630 cm2/V-s which is ∼30% lower than similar channels grown on GaAs substrates.

Copyright

References

Hide All
[1] Greene, A., et al. ., Solid. State. Electron., 78, 56, (2012).
[2] Nainani, A., et al. ., IEEE Trans. Electron Devices, 58, 3407 (2011).
[3] Tokranov, V. et al. ., J. Cryst. Growth, 378, 631 (2013).
[4] Bennett, B. R. et al. ., Appl. Phys. Lett., 91, 042104 (2007).
[5] Madisetti, S. et al. ., Phys. Status Solidi - RRL, 7, 550 (2013).
[6] Zhao, H. et al. ., Appl. Phys. Lett., 96, 102101 (2010).
[7] Wang, W. et al. ., IEEE Trans. Electron Dev., 58, 1972 (2011).
[8] Radosavljevic, M. et al. ., IEEE Electron Devices Meeting, p. 1 (2008).
[9] Nainani, A. et al. ., J. Appl. Phys., 110, 014503 (2011).
[10] Akahane, K. et al. ., J. Cryst. Growth, 264, 21 (2004).
[11] Akahane, K. et al. ., J. Cryst. Growth, 283, 297 (2005).
[12] Kwang, M. K., et al. ., Nanotechnology, 20, 225201 (2009).
[13] Toyota, H. et al. ., Phys. Procedia, 3, 1345 (2010).
[14] Cerutti, L. et al. ., IEEE Photon. Technol. Lett., 22, 553 (2010).
[15] Koveshnikov, S. et al. ., Appl. Phys. Lett., 88, 022106 (2006).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed