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Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

Published online by Cambridge University Press:  17 March 2011

S. Nikishin ,
G. Kipshidze ,
V. Kuryatkov ,
A. Zubrilov ,
K. Choi ,
Íu. Gherasoiu ,
L. Grave de Peralta ,
T. Prokofyeva ,
M. Holtz  and
R. Asomoza
...Show all authors
S. Nikishin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
G. Kipshidze
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
V. Kuryatkov
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
A. Zubrilov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
K. Choi
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
Íu. Gherasoiu
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
L. Grave de Peralta
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
T. Prokofyeva
Affiliation:
Department of Physics, Texas Tech University, Lubbock, TX 79401, USA
M. Holtz
Affiliation:
Department of Physics, Texas Tech University, Lubbock, TX 79401, USA
R. Asomoza
Affiliation:
SIMS laboratory of SEES, Department of Electrical Engineering, CINVESTAV, Mexico D.F. Mexico
Yu. Kudryavtsev
Affiliation:
SIMS laboratory of SEES, Department of Electrical Engineering, CINVESTAV, Mexico D.F. Mexico
H. Temkin
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79401, USA
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Abstract

We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1−xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 µm, we find the background electron concentration of (1-2)×1016 cm−3 and mobility of (800±100) cm2/Vs. In AlxGa1−xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 µm the electron concentration of (2-3)×1016 cm−3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.37
Copyright
Copyright © Materials Research Society 2001

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References

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