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Gas Phase and Surface Reactions of Organometallic Arsenic Sources

  • T.R. Omstead (a1), S. Brandon (a1), M. Hoveland (a1), K.F. Jensen (a1), D.A. Bohling (a2) and G.T. Muhr (a2)...

Abstract

The chemical kinetics of two new organometallic arsenic substitutes, tris-trifluoromethylarsenic (As(CF3)3) and phenylarsine (PhAsH2), for use in the MOCVD of GaAs have been characterized through the use of microbalance gravimetry and molecular beam mass spectrometry. Both growth rate and gas-phase cracking studies demonstrate that phenylarsine interacts only slightly with the common gallium precursors, which may make it a useful alternative to arsine. Growth with tris-trifluoromethylarsenic is achieved only at low V/III ratios and with pressures above 250 Torr. The compound etches GaAs under most conditions.

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1. Omstead, T.R., Sickle, P.M. Van, Lee, P.W., and Jensen, K.F., J.Cryst. Gr. 93(1988) 2028.
2. Lee, P.W., Omstead, T.R., McKenna, D.R. and Jensen, K.F., J.Crystal Gr. 93(1988) 134142.
3. Lum, R.M., Klingert, J.K., and Lamont, M.G., J. Crystal Growth 89(1988) 137142.
4. Stringfellow, G.B., J. of Electronic Materials 17(4)(1988) 327335.
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7. Brauers, A., Kayser, O., Kall, R., Heinecke, H., Balk, P., and Hoffmann, H., J. Cryst. Gr. 93 (1988) 714.

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Gas Phase and Surface Reactions of Organometallic Arsenic Sources

  • T.R. Omstead (a1), S. Brandon (a1), M. Hoveland (a1), K.F. Jensen (a1), D.A. Bohling (a2) and G.T. Muhr (a2)...

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