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Gap State Distribution and Interface States in a-Si:H and a-SiGe:H by Modulated Photocurrent

Published online by Cambridge University Press:  26 February 2011

G. Schumm ,
K. Nitsch ,
M. B. Schubert  and
G. H. Bauer
G. Schumm
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republic of Germany
K. Nitsch
Affiliation:
Instytut Technologii Elektronowej, Politechniki Wroclawskiej, Wybrzeze Wyspianskiego 27, 50–370 Wroclaw, Poland
M. B. Schubert
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republic of Germany
G. H. Bauer
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

The energy distribution of localized states above the Fermi level in undoped a-Si:H and a-SiGe:H has been determined by phase shift analysis of modulated photocurrents. (1) A peak in the DOS with 0.56 – 0.65 eV activation energy has been found, reflecting the D− -state of isolated dangling bonds. A second peak with 0.35 eV activation energy has been detected which is attributed to the T3+-state of T3+-T3− -pairs or to the antibonding state of weak Si-Si bonds, respectively. Strong illumination raises the lower peak and quenches the upper one supporting a shallow state - deep state conversion model. (2) From temperature-dependent measurements a shift of the dominant electron transport path into the tail with decreasing temperature - associated with tail state hopping - has been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 543
Copyright
Copyright © Materials Research Society 1988

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