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GaN Materials for High Power Microwave Amplifiers

  • Lester F. Eastman (a1), Kenneth chu (a1), Joseph smart (a1) and J. Richard Shealy (a1)

Abstract

The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for .15 μm gates reached 140 GHz, while .3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

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1. Weimann, N., Eastman, L. F., Doppalapudi, P., Ng, H. M., and Moustakas, T. D., Journal of Applied Physics, 83, 7, (1 April 1998).
2. Ridley, B. K.; private communication.
3. Mishra, U.; private communication.
4. Gradinaru, G., Khan, M. A., Kav, N. C., and Serdarshan, T. S., Applied Physics Letters, 72, 12 ( 23 March 1998).

GaN Materials for High Power Microwave Amplifiers

  • Lester F. Eastman (a1), Kenneth chu (a1), Joseph smart (a1) and J. Richard Shealy (a1)

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